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更多>>華為與小米手機(jī)要生產(chǎn)智能汽車SG-210SDBA愛普生車規(guī)溫度125度晶振X1G004601A00700
來源:http://m.goapplyonline.com 作者:zhaoxiandz 2022年10月14
華為與小米手機(jī)要生產(chǎn)智能汽車SG-210SDBA愛普生車規(guī)溫度125度晶振X1G004601A00700
此外周鴻祎還表示目前雖然造車的企業(yè)這么多,但還沒有贏家出現(xiàn),造車是一個(gè)長期的事情,可能要5年10年才會(huì)有結(jié)果.不過近日有一家廠商無視泡沫,也親自下場,那就是360.正式發(fā)文稱360攜手哪吒汽車,正式進(jìn)軍汽車領(lǐng)域,而360與華為的做法基本是一致的,愛普生晶振自己不造車自己也不為主,主要是把自己技術(shù)輸出給哪吒汽車,與哪吒汽車一起造好車.有人表示這么多巨頭下場造車,就如當(dāng)年智能手機(jī)并雄并起一樣,有很大的泡沫,接下來可能有很多廠商在這泡沫中死去,石英晶體振蕩器最后只有幾家能夠存活下來.
SG-210SDBA愛普生車規(guī)溫度125度晶振X1G004601A00700,華為與小米手機(jī)智能汽車晶振
后來傳出OPPO也要造車,還有滴滴、創(chuàng)維等也進(jìn)入了智能汽車領(lǐng)域,智能汽車可以說成為了當(dāng)前最大的風(fēng)口.華為、小米能干,我也能干,又一巨頭進(jìn)軍智能汽車領(lǐng)域華為正式表示進(jìn)入智能汽車領(lǐng)域,不過華為表示自己不造車,有源貼片晶振只聚焦ICT技術(shù),幫車企造好車.而現(xiàn)在小米也正式確定要造車,雷軍親自帶隊(duì)稱這是自己最后一次創(chuàng)業(yè),把自己的聲譽(yù)都押上了.
SG-210SDBA愛普生車規(guī)溫度125度晶振X1G004601A00700,華為與小米手機(jī)智能汽車晶振
此外周鴻祎還表示目前雖然造車的企業(yè)這么多,但還沒有贏家出現(xiàn),造車是一個(gè)長期的事情,可能要5年10年才會(huì)有結(jié)果.不過近日有一家廠商無視泡沫,也親自下場,那就是360.正式發(fā)文稱360攜手哪吒汽車,正式進(jìn)軍汽車領(lǐng)域,而360與華為的做法基本是一致的,愛普生晶振自己不造車自己也不為主,主要是把自己技術(shù)輸出給哪吒汽車,與哪吒汽車一起造好車.有人表示這么多巨頭下場造車,就如當(dāng)年智能手機(jī)并雄并起一樣,有很大的泡沫,接下來可能有很多廠商在這泡沫中死去,石英晶體振蕩器最后只有幾家能夠存活下來.
SG-210SDBA愛普生車規(guī)溫度125度晶振X1G004601A00700,華為與小米手機(jī)智能汽車晶振
愛普生有源晶振編碼 | 型號(hào) | 頻率 | 工作溫度 | 長X寬X高 | 輸出波 |
X1G004611A00100 | SG-210SEBA | 24.000000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A00300 | SG-210SEBA | 27.000000 MHz | -40 to 125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A00400 | SG-210SEBA | 20.000000 MHz | -40 to 125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A00500 | SG-210SEBA | 27.000000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004601A00500 | SG-210SDBA | 16.000000 MHz | -40 to 125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004601A00700 | SG-210SDBA | 27.000000 MHz | -40 to 125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A00100 | SG-210SEBA | 27.000000 MHz | -40 to +125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A00300 | SG-210SEBA | 20.000000 MHz | -40 to +125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A00400 | SG-210SEBA | 25.000000 MHz | -40 to +125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A00500 | SG-210SEBA | 24.000000 MHz | -40 to +125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004601A00500 | SG-210SDBA | 16.000000 MHz | -40 to +125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004601A00700 | SG-210SDBA | 27.000000 MHz | -40 to +125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004601A00500 | SG-210SDBA | 16.000000 MHz | -40 to 125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004601A00700 | SG-210SDBA | 27.000000 MHz | -40 to 125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004601A01100 | SG-210SDBA | 27.000000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A00100 | SG-210SEBA | 24.000000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A00300 | SG-210SEBA | 27.000000 MHz | -40 to 125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A00400 | SG-210SEBA | 20.000000 MHz | -40 to 125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A00500 | SG-210SEBA | 27.000000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A01200 | SG-210SEBA | 24.000000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A01300 | SG-210SEBA | 33.000000 MHz | -40 to 85 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A01400 | SG-210SEBA | 16.666600 MHz | -40 to 85 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A01600 | SG-210SEBA | 14.000000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A01700 | SG-210SEBA | 37.125000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A01900 | SG-210SEBA | 13.000000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A02000 | SG-210SEBA | 10.000000 MHz | -40 to 85 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A02100 | SG-210SEBA | 48.000000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A02200 | SG-210SEBA | 16.660000 MHz | -40 to 85 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A02400 | SG-210SEBA | 14.745600 MHz | -40 to 85 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A02500 | SG-210SEBA | 16.640000 MHz | -40 to 85 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A02600 | SG-210SEBA | 24.576000 MHz | -40 to 85 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A02700 | SG-210SEBA | 12.288000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A02800 | SG-210SEBA | 25.000000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A03000 | SG-210SEBA | 48.000000 MHz | -40 to 85 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A03100 | SG-210SEBA | 25.000000 MHz | -40 to 125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A03300 | SG-210SEBA | 24.000000 MHz | -40 to 125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A03400 | SG-210SEBA | 20.000000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A03500 | SG-210SEBA | 41.250000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A03600 | SG-210SEBA | 16.640000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A03700 | SG-210SEBA | 16.510000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A03800 | SG-210SEBA | 9.600000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A04100 | SG-210SEBA | 16.666600 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A04200 | SG-210SEBA | 33.300000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A04300 | SG-210SEBA | 25.000000 MHz | -40 to 85 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A04400 | SG-210SEBA | 33.000000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004611A04500 | SG-210SEBA | 49.500000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004591A00100 | SG-210SCBA | 27.000000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004591A00200 | SG-210SCBA | 49.090000 MHz | -40 to 105 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
X1G004591A00300 | SG-210SCBA | 40.000000 MHz | -40 to 125 °C | 2.50 x 2.00 x 0.90 mm | CMOS |
SG-210SDBA愛普生車規(guī)溫度125度晶振X1G004601A00700,華為與小米手機(jī)智能汽車晶振
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此文關(guān)鍵字: 愛普生有源晶振
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