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更多>>蘋果手機iPhone14和iPhone14Max銷量下滑SG-8018CE愛普生有源晶振X1G005591006700
來源:http://m.goapplyonline.com 作者:zhaoxiandz 2022年10月13
蘋果手機iPhone14和iPhone14Max銷量下滑SG-8018CE愛普生有源晶振X1G005591006700
另一方面,當(dāng)前全球經(jīng)濟增長速度放緩,消費者換機欲望走低,消費觀念開始趨向理性,使第三財季蘋果在大中華地區(qū)罕見出現(xiàn)1%的降幅.因此,基于iPhone13系列過于暢銷,以及換機周期拉長,iPhone14銷量下滑可能會是大概率事件.然而兩款Pro機型升級到了A16芯片.愛普生晶振這使iPhone能夠提供更出色的續(xù)航并反應(yīng)極為靈敏.同時iPhone14Pro系列帶來了全系多了直觀方式與iPhone進行交互,徹底模糊硬件和軟件之間的界限,這被稱作靈動島的概念.通過精細打造的動畫和過渡,清楚的向用戶傳達信息.在性能配置上往年蘋果通常會在主要手機版本中引入新的自研A芯片.愛普生石英晶體振蕩器,X1G005591020600晶振
SG-8018CE愛普生有源晶振X1G005591006700,蘋果手機iPhone14和iPhone14Max晶振
不過14和14Max保留與iPhone13相同的A15仿生芯片,也成為其最大的槽點.蘋果手機iPhone14和iPhone14Max銷量下滑iPhone14創(chuàng)新乏善可陳目前市場銷售來看iPhone14沒有誠意的擠牙膏升級,已經(jīng)遭到反噬.實際上早有人評論iPhone14就是換殼的iPhone13.智能手機晶振當(dāng)然即使iPhone14Pro和Pro Max所配置的全新A16芯片,也被人吐槽迭代升級太小,甚至被認為是A15的制程升級版.但全新A16芯片受制于物理限制,效率提升不大也算是正常,但仍然對其他競爭廠商形成了降維打擊.愛普生石英晶體振蕩器,X1G005591020600晶振
SG-8018CE愛普生有源晶振X1G005591006700,蘋果手機iPhone14和iPhone14Max晶振
另一方面,當(dāng)前全球經(jīng)濟增長速度放緩,消費者換機欲望走低,消費觀念開始趨向理性,使第三財季蘋果在大中華地區(qū)罕見出現(xiàn)1%的降幅.因此,基于iPhone13系列過于暢銷,以及換機周期拉長,iPhone14銷量下滑可能會是大概率事件.然而兩款Pro機型升級到了A16芯片.愛普生晶振這使iPhone能夠提供更出色的續(xù)航并反應(yīng)極為靈敏.同時iPhone14Pro系列帶來了全系多了直觀方式與iPhone進行交互,徹底模糊硬件和軟件之間的界限,這被稱作靈動島的概念.通過精細打造的動畫和過渡,清楚的向用戶傳達信息.在性能配置上往年蘋果通常會在主要手機版本中引入新的自研A芯片.愛普生石英晶體振蕩器,X1G005591020600晶振
SG-8018CE愛普生有源晶振X1G005591006700,蘋果手機iPhone14和iPhone14Max晶振
愛普生有源晶振編碼 | 型號 | 頻率 | 長X寬X高 | 輸出波 | 電源電壓 | 工作溫度 | 頻差 |
X1G005591005900 | SG-8018CE | 11.289600 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006000 | SG-8018CE | 23.040000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006100 | SG-8018CE | 28.636360 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006200 | SG-8018CE | 14.430000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006300 | SG-8018CE | 8.439025 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006400 | SG-8018CE | 29.491200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006500 | SG-8018CE | 22.222200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591031100 | SG-8018CE | 30.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006600 | SG-8018CE | 19.660800 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006700 | SG-8018CE | 6.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006800 | SG-8018CE | 7.680000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006900 | SG-8018CE | 74.250000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007000 | SG-8018CE | 88.888000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007100 | SG-8018CE | 88.888000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007200 | SG-8018CE | 12.500000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007300 | SG-8018CE | 148.500000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007400 | SG-8018CE | 74.250000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007500 | SG-8018CE | 57.272720 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007600 | SG-8018CE | 37.125000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007700 | SG-8018CE | 19.200000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007800 | SG-8018CE | 6.005284 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007900 | SG-8018CE | 57.209760 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008000 | SG-8018CE | 10.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008100 | SG-8018CE | 133.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008200 | SG-8018CE | 32.400000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008300 | SG-8018CE | 22.579200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008400 | SG-8018CE | 44.236800 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008500 | SG-8018CE | 1.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008600 | SG-8018CE | 4.915200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008700 | SG-8018CE | 1.843200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008800 | SG-8018CE | 33.333000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
SG-8018CE愛普生有源晶振X1G005591006700,蘋果手機iPhone14和iPhone14Max晶振
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